## Abstract The development of diamond based devices for high power electronic applications requires the growth of thick heavily boron doped diamond. During the growth of CVD single crystals, the final form of the film depends on the different crystalline faces growth rate with respect to each othe
Influence of tertiarybutylphosphine (TBP) addition on the CVD growth of diamond
β Scribed by Frangieh, G. ;Jomard, F. ;Pinault, M.-A. ;Barjon, J.
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 300 KB
- Volume
- 206
- Category
- Article
- ISSN
- 0031-8965
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β¦ Synopsis
Abstract
Understanding the growth mechanisms of phosphorusβdoped diamond is an important issue for the fabrication of nβtype diamond. In this work, the influence of the addition of phosphorus precursor, tertiarybutylphosphine (TBP), on diamond growth mechanism, is investigated. Isolated diamond crystallites and polycrystalline diamond films were grown on silicon substrates by microwave plasma assisted chemical vapour deposition (CVD). The growth rate anisotropy is deduced by measuring the facet sizes of crystallites observed in a scanning electron microscope. We show that a small amount of TBP added during diamond growth, has a strong impact on the growth rate anisotropy and on the secondary nucleation. We also show that phosphorus is incorporated in polycrystalline diamond films as observed by secondary ion mass spectrometry.
π SIMILAR VOLUMES
## Abstract Diamond films were synthesized with up to 50% argon in the gas phase using high power plasmaβassisted chemical vapour deposition (PACVD). This resulted in a strong increase of the deposition rates. Polycrystalline diamond (PCD) films grown with Ar have shown a higher incorporation of sp