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Influence of tertiarybutylphosphine (TBP) addition on the CVD growth of diamond

✍ Scribed by Frangieh, G. ;Jomard, F. ;Pinault, M.-A. ;Barjon, J.


Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
300 KB
Volume
206
Category
Article
ISSN
0031-8965

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✦ Synopsis


Abstract

Understanding the growth mechanisms of phosphorus‐doped diamond is an important issue for the fabrication of n‐type diamond. In this work, the influence of the addition of phosphorus precursor, tertiarybutylphosphine (TBP), on diamond growth mechanism, is investigated. Isolated diamond crystallites and polycrystalline diamond films were grown on silicon substrates by microwave plasma assisted chemical vapour deposition (CVD). The growth rate anisotropy is deduced by measuring the facet sizes of crystallites observed in a scanning electron microscope. We show that a small amount of TBP added during diamond growth, has a strong impact on the growth rate anisotropy and on the secondary nucleation. We also show that phosphorus is incorporated in polycrystalline diamond films as observed by secondary ion mass spectrometry.


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