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Influence of surface morphology upon recovery kinetics during interrupted epitaxial growth

✍ Scribed by S. Clarke; D.D. Vvedensky; M.W. Ricketts


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
272 KB
Volume
95
Category
Article
ISSN
0022-0248

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The gas-phase epitaxy of AlN on saphire substrates in the system Al-HCl-NH,-Ar was investigated. The uniformity and structural perfection of the layers were shown to be determined by gas dynamics in the growth zone. The growth rate of A1N-layer is proportional to AlCl concentration in the growth zon