Influence of supercritical and natural drying methods on structure and properties of porous silicon
β Scribed by Dongsheng Xu; Guolin Guo; Linlin Gui; Youqi Tang; Bairui Zhang; Guogang Qin
- Publisher
- Springer
- Year
- 2000
- Tongue
- English
- Weight
- 432 KB
- Volume
- 45
- Category
- Article
- ISSN
- 1001-6538
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Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO 2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxi
## Abstract The structural and optical properties of porous silicon (PS) layers prepared by VapourβEtching (VE) of moderately and heavily boronβdoped Si substrates are investigated. The VE technique produces rough PS layers that are essentially formed of interconnected clusterβlike structures. Opti