Enhancement of the 2DEG density in AlGaA
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S. Rekaya; L. Sfaxi; L. Bouzaïene; H. Maaref; C. Bru-Chevallier
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Article
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2008
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Elsevier Science
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English
⚖ 439 KB
The pseudomorphic high electron mobility transistor (P-HEMT) structure materials Al 0.33 Ga 0.7 As/In 0.1 Ga 0.9 As/GaAs have been grown by molecular beam epitaxy (MBE) on (311)A and (111)A GaAs substrates. The epitaxy of strain heterostructure on high index GaAs substrate has led to new growth phen