Influence of structural defects and concentration inhomogeneities in GaAs epitaxial layers on reverse I-U characteristics of schottky barrier diodes

✍ Scribed by Konakova, R. V. ;Melnikov, G. D. ;Tkhorik, Yu. A. ;Filatov, M. Yu.

• Publisher: John Wiley and Sons
• Year: 1979
• Tongue: English
• Weight: 177 KB
• Volume: 55
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.2210550253