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Influence of strain due to impurities on the electron mobility in silicon

โœ Scribed by Daga, O P; Khokle, W S


Book ID
111900431
Publisher
Institute of Physics
Year
1971
Tongue
English
Weight
289 KB
Volume
4
Category
Article
ISSN
0022-3719

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For dilute electrons dispersed in the carrier gas argon the influence of attachment to different halocarbons on the time variation of the electron mobility is studied. In some cases stationary negative electron mobilities are predicted.