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Influence of SiO32- impurity on growth habit of potassium dihydrogen phosphate crystal

✍ Scribed by Jianxu Ding; Yongqiang Lu; Shenglai Wang; Xiaoming Mu; Qingtian Gu; Zhengping Wang; Yun Sun; Xiaoling Liang; Xinguang Xu; Xun Sun; Wenjie Liu; Guangxia Liu; Shengjun Zhu

Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
228 KB
Volume
45
Category
Article
ISSN
0232-1300

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✦ Synopsis

By altering the concentration of silicate (SiO 3 2-

) impurity in the solution, a series of potassium dihydrogen phosphate (KDP) crystals was obtained by the conventional temperature cooling and the rapid growth methods, respectively. It was observed that the presence of SiO 3 2-made KDP crystals tapering in conventional cooling method, while more SiO 3 2-induced inclusions at prismatic sectors in the rapid growth method. Laser-polarization-interference results showed that SiO 3 2-extended the dead zone and reduced the growth rate of (100) face of KDP crystals. The negative influence of SiO 3 2-on the growth was considered absolutely similar to the effect of cations. It was also suggested that the stability of solution doped with SiO 3 2was improved without seed crystals, while it was destructed with seed crystals. The inhibition mechanism was analyzed in terms of SiO 3 2-absorption on (100) face.

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