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Influence of SiO2 cap layers on lateral solid-phase epitaxy of implanted amorphous Si films

✍ Scribed by H. Ishiwara; N. Tomita; T. Dan; S. Furukawa


Book ID
113280202
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
376 KB
Volume
39
Category
Article
ISSN
0168-583X

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πŸ“œ SIMILAR VOLUMES


Solid phase epitaxy of Ge films on CaF2/
✍ E.P. Rugeramigabo; C. Deiter; J. WollschlΓ€ger πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 469 KB

At room temperature deposited Ge films (thickness < 3 nm) homogeneously wet CaF 2 /Si(1 1 1). The films are crystalline but exhibit granular structure. The grain size decreases with increasing film thickness. The quality of the homogeneous films is improved by annealing up to 200 8C. Ge films break