𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Influence of segregation on the composition of GaAs1−xSbxsolid solutions grown by liquid-phase epitaxy

✍ Scribed by Yu. F. Biryulin

Book ID
110133125
Publisher
Springer
Year
2002
Tongue
English
Weight
29 KB
Volume
36
Category
Article
ISSN
1063-7826

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Photoluminescence measurements of GaAs g
Photoluminescence measurements of GaAs grown by liquid phase epitaxy from Ga–Bi solution
✍ M. Ciorga; L. Bryja; J. Misiewicz; R. Paszkiewicz; M. Panek; B. Paszkiewicz; M. 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 102 KB 👁 1 views

Thick, intentionally undoped GaAs epitaxial layers grown by LPE from Ga-Bi solution with different contents of Bi in liquid solvent (from 0 to 82 at.%Bi) were studied by photoluminescence (PL) at temperature T 2 K. The dependence of the photoluminescence spectrum on the content of Bi in solution was

Luminescence of Liquid Phase Epitaxial G
Luminescence of Liquid Phase Epitaxial GaxIn1−xP Layers Grown on Differently Doped GaAs Substrates
✍ Dr. M. A. Herman; W. Lewandowski; W. Zahorowski 📂 Article 📅 1974 🏛 John Wiley and Sons 🌐 English ⚖ 147 KB 👁 2 views

Luminescence of Liquid Phase E p i t d a l 0axInl-,P Layers Grown on Differently Doped GaA s Substrates Luminescence properties of Ga In P have recently become subject of intensive research in laboratories throu&oui-&e world. Hawever, little is known on the 4 221 ( 1 d )