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Influence of radiation-induced clusters on transport properties of silicon

✍ Scribed by E. Borchi; M. Bruzzi; U. Biggeri; S. Lazanu

Publisher
Italian Physical Society
Year
1996
Tongue
English
Weight
598 KB
Volume
18
Category
Article
ISSN
0392-6737

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Bismuth ion beams consist of several ion clusters with comparable currents, which influences the energy spread and brightness of the source. We present a simulation of the beam near the Bi LMIS including the effect of the discrete Coulomb interactions and cluster structure of the beam. We also compa