๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Influence of preparation technique on the structural, optical and electrical properties of polycrystalline CdS films

โœ Scribed by S A Al Kuhaimi


Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
789 KB
Volume
51
Category
Article
ISSN
0042-207X

No coin nor oath required. For personal study only.

โœฆ Synopsis


CdS films were prepared by three different techniques-vacuum evaporation (VE), screen printing (SP), and chemical bath deposition (CBD). The influence of the preparation technique on the structural, optical and electrical properties of the polycrystalline CdS films was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), optical transmission and electrical resistivity. Evaporated and chemical bath deposited films were polycrystalline with a preferred (002) orientation. Film optical parameters (n, k, a, E g ) were evaluated and correlated with the preparation technique. The electrical resistivity of VE films is found to be about one hundredth of the resistivity of an SP film, and one millionth that of a CBD film.

The effects of film thickness on the structural, optical and electrical properties of CdS film were also studied. It was found that the optical absorption edge shifted to a higher wavelength with increasing film thickness and electrical resistivity decreased with increasing film thickness ; this was attributed to the effect of crystallite size, the degree of preferred orientation, internal microstrain and stoichiometry of the film.


๐Ÿ“œ SIMILAR VOLUMES


Influence of substrate and film thicknes
โœ N. Gopalakrishnan; L. Balakrishnan; K. Latha; S. Gowrishankar ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 143 KB ๐Ÿ‘ 2 views

## Abstract Transparent Zinc Oxide (ZnO) thin films have been grown on Si (100) and Sapphire (0001) substrates by RF magnetron sputtering for different growth time intervals (10, 30 and 60 min) to study the substrate and thickness effects. All the films have been grown at a substrate temperature of