๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Influence of phosphorus, manganese, and tin on the physical properties of copper


Publisher
Elsevier Science
Year
1913
Tongue
English
Weight
129 KB
Volume
175
Category
Article
ISSN
0016-0032

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


The influence of metallic substitution o
โœ G. P. Joseph; I. Korah; K. Raja Rajan; P. C. Thomas; M. Vimalan; J. Madhavan; P. ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 171 KB ๐Ÿ‘ 1 views

## Abstract Good optical grade single crystals of pure, Cd^2+^ and Mg^2+^ doped Manganese Mercury Thiyocyanate (MMTC) crystals are grown by slow solvent evaporation technique at room temperature. Single crystal XRD studies reveal that the incorporation of metallic dopants has not changed the struct

Influence of different treatment techniq
โœ S. Riedel; S.E. Schulz; J. Baumann; M. Rennau; T. Gessner ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 539 KB

The barrier property of MOCVD produced TiN is assessed by use of analytical and electrical methods. A pn-diode was used as the electrical test device. TiN was varied by the application of different TiN treatments. Untreated TiN failed at 3508C annealing temperature. Plasma treatment raised the failu

Influence of SiH4 process step on physic
โœ S. Chhun; L.G. Gosset; N. Casanova; J.F. Guillaumond; P. Dumont-Girard; X. Feder ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 478 KB

Self-aligned barriers on copper are widely investigated as a promising solution to replace standard PECVD dielectric barriers for the 65 nm technology node and beyond. As an alternative to electroless or selective CVD deposition, CuSiN barriers, based on the controlled modification of copper surface