Influence of different treatment techniques on the barrier properties of MOCVD TiN against copper diffusion

✍ Scribed by S. Riedel; S.E. Schulz; J. Baumann; M. Rennau; T. Gessner

• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 539 KB
• Volume: 55
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(00)00450-0

✦ Synopsis

The barrier property of MOCVD produced TiN is assessed by use of analytical and electrical methods. A pn-diode was used as the electrical test device. TiN was varied by the application of different TiN treatments. Untreated TiN failed at 3508C annealing temperature. Plasma treatment raised the failure temperature to 5008C. It is shown that etch pit tests and R s measurement do not indicate barrier failure at an early stage.