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Influence of oxygen vacancy concentration on electrical resistivity in EuO1−x

✍ Scribed by M. Lubecka; A. Wȩgrzyn; D. Sendorek

Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
307 KB
Volume
131
Category
Article
ISSN
0040-6090

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📜 SIMILAR VOLUMES

Influence of interstitial ordering of ni
Influence of interstitial ordering of nitrogen in tantalum on electrical resistivity
✍ Peter Jung; Klaus Trenzinger 📂 Article 📅 1974 🏛 Elsevier Science ⚖ 557 KB

In tantalum samples containing more than 1.2 at.?; of nitrogen in solid solution, electrical resietivi,ty is reduced by up to 59 per cent during annealing. It is shown that this reduction is caused by partial ordering of the nitrogen atoms in the tantalum lattice. Experimental results on the depende