Thin-film transistors (TFTs) were fabricated on SiO 2 /n + -Si substrates using amorphous binary In 2 O 3 -ZnO (a-IZO) films with different thickness for active channel layers deposited by the rf magnetron sputtering at room temperature. The performance of devices was found to be thickness dependent
โฆ LIBER โฆ
Influence of oxidation conditions on the properties of indium oxide thin films
โ Scribed by Mihaela Girtan; G.I. Rusu; G.G. Rusu; S. Gurlui
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 657 KB
- Volume
- 162-163
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Influence of the channel layer thickness
โ
Ai Hua Chen; Hong Tao Cao; Hai Zhong Zhang; Ling Yan Liang; Zhi Min Liu; Zheng Y
๐
Article
๐
2010
๐
Elsevier Science
๐
English
โ 751 KB
Electro-optical properties of thin indiu
โ
R.G. Dhere; T.A. Gessert; L.L. Schilling; A.J. Nelson; K.M. Jones; H. Aharoni; T
๐
Article
๐
1987
๐
Elsevier Science
โ 942 KB
This work has been concerned with the measurement and analysis of the electro-optical properties of thin films of indium tin oxide deposited by ion beam sputtering. In the present context, the principal use of these films is for window layer solar cells, and it is necessary to have an accurate knowl
Electrical properties of electron-beam-e
โ
A. Balasubramanian; M. Radhakrishnan; C. Balasubramanian
๐
Article
๐
1982
๐
Elsevier Science
๐
English
โ 798 KB
Optoelectrical and structural properties
โ
S. Naseem; M. Iqbal; K. Hussain
๐
Article
๐
1993
๐
Elsevier Science
๐
English
โ 347 KB
Influence of preparation conditions on t
โ
Alaa A. Akl
๐
Article
๐
2010
๐
Elsevier Science
๐
English
โ 536 KB
Electrical properties of vacuum-deposite
โ
Mamoru Mizuhashi
๐
Article
๐
1980
๐
Elsevier Science
๐
English
โ 818 KB