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Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures

✍ Scribed by M. Godlewski; V. Yu. Ivanov; E. Łusakowska; R. Bożek; S. Miasojedovas; S. Juršėnas; K. Kazlauskas; A. Žukauskas; E. M. Goldys; M. R. Phillips; T. Böttcher; S. Figge; D. Hommel

Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 183 KB
Volume: 2
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200460619

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