## Abstract Manganese doped IIβIVβV~2~ chalcopyrites are promising candidates for room temperature ferromagnetic semiconductors. In this category, we report a new material MgGeAs~2~:Mn for MBE growth on GaAs substrates. Firstly, we investigated the growth of MgGeAs~2~ on GaAs (001) and (111)B. Stoi
Influence of Mn incorporation on MBE growth of (In,Mn)N
β Scribed by Gan Feng; Masahiro Yoshimoto
- Book ID
- 110627018
- Publisher
- Springer US
- Year
- 2006
- Tongue
- English
- Weight
- 144 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0361-5235
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π SIMILAR VOLUMES
## Abstract Ternary MnGeP~2~ thin films have been grown on GaAs substrate using MBE technique. The films prepared at 435 Β°C showed ferromagnetism at room temperature. TEM observation revealed a segregation of MnP tileβshaped grains. Films grown at 585 Β°C showed no trace of ferromagnetic secondary p
## Abstract The influence of the insertion of manganese in Ξ³βIn~2~Se~3~ thin films on their physico chemical, electrical and optical properties is studied. Samples are obtained by elaborating Ξ³βIn~2~Se~3~ by coβevaporation on a thin layer of manganese, the substrate temperature being __T__ ~s~ = 33