𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Influence of Mn incorporation on MBE growth of (In,Mn)N

✍ Scribed by Gan Feng; Masahiro Yoshimoto


Book ID
110627018
Publisher
Springer US
Year
2006
Tongue
English
Weight
144 KB
Volume
35
Category
Article
ISSN
0361-5235

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


MBE growth of MgGeAs2:Mn on GaAs substra
✍ Li, Z. ;Bender, H. ;Malfait, M. ;Moshchalkov, V. V. ;Borghs, G. ;Roy, W. Van πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 557 KB

## Abstract Manganese doped II–IV–V~2~ chalcopyrites are promising candidates for room temperature ferromagnetic semiconductors. In this category, we report a new material MgGeAs~2~:Mn for MBE growth on GaAs substrates. Firstly, we investigated the growth of MgGeAs~2~ on GaAs (001) and (111)B. Stoi

MBE growth and TEM analyses in Mn-Ge-P c
✍ Minami, K. ;Bouravleuv, A. D. ;Sato, Y. ;Ishibashi, T. ;Kuwano, N. ;Sato, K. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 315 KB

## Abstract Ternary MnGeP~2~ thin films have been grown on GaAs substrate using MBE technique. The films prepared at 435 Β°C showed ferromagnetism at room temperature. TEM observation revealed a segregation of MnP tile‐shaped grains. Films grown at 585 Β°C showed no trace of ferromagnetic secondary p

Influence of Mn on the properties of Ξ³-I
✍ Amory, C. ;Guettari, N. ;BernΓ¨de, J. C. ;Mebarki, M. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 319 KB

## Abstract The influence of the insertion of manganese in γ‐In~2~Se~3~ thin films on their physico chemical, electrical and optical properties is studied. Samples are obtained by elaborating γ‐In~2~Se~3~ by co‐evaporation on a thin layer of manganese, the substrate temperature being __T__ ~s~ = 33

Incorporation processes in MBE growth of
✍ R. Venkatasubramanian; N. Otsuka; J. Qiu; L.A. Kolodziejski; R.L. Gunshor πŸ“‚ Article πŸ“… 1989 πŸ› Elsevier Science 🌐 English βš– 481 KB