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Influence of microcrystallization on noise in boron-doped silicon film

✍ Scribed by Li, Shibin ;Wu, Zhiming ;Li, Wei ;Liao, Naiman ;Yu, Junsheng ;Jiang, Yadong

Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
317 KB
Volume
204
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

A series of hydrogenated silicon (Si:H) thin films of about 350 nm in thickness were fabricated on K9 glass substrate by plasma enhanced chemical vapor deposition. The transition between hydrogenated amorphous silicon (a‐Si:H) and microcrystalline hydrogenated silicon (ΞΌc‐Si:H) was characterized by atomic force microscopy and X‐ray diffraction microstructure analysis. The low‐frequency noise (1/f noise) and random telegraph switching (RTS) noise of Si:H films were measured using a designed semiconductor system. The results show that the 1/f noise of ΞΌc‐Si:H is 4 orders of magnitude lower than that of a‐Si:H and no RTS noise of Si:H films was found. (Β© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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## Abstract As‐grown (100) homoepitaxial diamond films with boron concentrations [B] from 4.6 Γ— 10^16^ to 1.5 Γ— 10^21^ cm^–3^ have been analysed using X‐ray photoelectron spectroscopy (XPS). Their C 1s core levels contain a dominant component around 284.17 Β± 0.2 eV ascribed to sp^3^ C and a main se