𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Influence of metal impurities on recombination activity of dislocations in multicrystalline silicon

✍ Scribed by Feklisova, O. V.; Yu, X.; Yang, D.; Yakimov, E. V.


Book ID
120313509
Publisher
Springer
Year
2013
Tongue
English
Weight
500 KB
Volume
47
Category
Article
ISSN
1063-7826

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Influence of surface treatment on electr
✍ A. Voigt; H.P. Strunk πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 545 KB

Polishing experiments show that chemomechanical treatment of multicrystalline silicon may cause electrical activation of dislocations, visible in electron-beam-induced current images. Mechanical polishing with A1203 in distilled water has no adverse effect. However, when traces of copper are added,

Influence of defects and impurities on t
✍ Shanshan Wu; Lei Wang; Xiaoqiang Li; Peng Wang; Deren Yang; Da You; Jiabin Du; T πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 316 KB

## Abstract The origin of the lower minority carrier lifetime in the border region of multicrystalline silicon (mc‐Si) ingots was investigated. Based on minority carrier lifetime measurements and chemical analyses, distributions of defects and impurities were studied. It is found that the content o