𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Influence of light on interstitial copper inp-type silicon

✍ Scribed by A. Belayachi; T. Heiser; J.P. Schunck; A. Kempf

Publisher
Springer
Year
2005
Tongue
English
Weight
479 KB
Volume
80
Category
Article
ISSN
1432-0630

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Effect of vacancies on copper precipitat
Effect of vacancies on copper precipitation in n-type Czochralski silicon
✍ Wang, Weiyan ;Yang, Deren ;Ma, Xiangyang ;Que, Duanlin πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 424 KB

## Abstract The effect of vacancies induced by the prior rapid thermal processing (RTP) at 900–1200 Β°C in Ar on copper (Cu) precipitation in n‐type silicon has been investigated by means of optical microscopy and transmission electron microscopy. It was revealed that in the sample without the prior

Influence of the doping concentration on
Influence of the doping concentration on crystallographic pore growth on n-type InP and GaAs
✍ Leisner, Malte ;Dorow-Gerspach, Daniel ;Carstensen, JΓΌrgen ;FΓΆll, Helmut πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 505 KB

## Abstract The growth of crystallographical pores (crysto pores) in n‐type InP and GaAs has been investigated in detail in this work. The dependence on several experimental parameters, like the substrate doping concentration __N__~D~, the etching current density __j__, nucleation, and etching time