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Effect of point defects on the recombination activity of copper precipitates inp-type Czochralski silicon

โœ Scribed by Weiyan Wang; Deren Yang; Xuegong Yu; Duanlin Que


Publisher
Springer US
Year
2008
Tongue
English
Weight
277 KB
Volume
19
Category
Article
ISSN
0957-4522

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Effect of vacancies on copper precipitat
โœ Wang, Weiyan ;Yang, Deren ;Ma, Xiangyang ;Que, Duanlin ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 424 KB

## Abstract The effect of vacancies induced by the prior rapid thermal processing (RTP) at 900โ€“1200 ยฐC in Ar on copper (Cu) precipitation in nโ€type silicon has been investigated by means of optical microscopy and transmission electron microscopy. It was revealed that in the sample without the prior