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Influence of layer thickness and compositional variations on the electrorefractive properties of a quantum well polarization-conversion modulator

โœ Scribed by Ristic, Sasa; Jaeger, Nicolas A. F.

Book ID
125438749
Publisher
AVS (American Vacuum Society)
Year
2006
Tongue
English
Weight
285 KB
Volume
24
Category
Article
ISSN
0734-2101

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Influence of the cap layer thickness on
Influence of the cap layer thickness on the optical properties of near surface GaInAs/GaAs quantum wells
โœ J. Dreybrodt; F. Faller; A. Forchel; J.P. Reithmaier ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 280 KB

We present photoluminescence investigations of GalnAs/GaAs quantum wells with thin cap layers ranging from 20 nm in thickness down to a complete cap layer removal. We observe a strong blue shift of up to 35 meV for an uncovered surface quantum well. A further shift up to the GaAs band edge can be ob