Influence of intrinsic point defects on the formation of structural defects and optically active centers during the annealing of erbium-and dysprosium-implanted silicon

✍ Scribed by N. A. Sobolev; E. I. Shek; A. M. Emel’yanov; V. I. Vdovin; T. G. Yugova

• Book ID: 110120118
• Publisher: Springer
• Year: 1999
• Tongue: English
• Weight: 57 KB
• Volume: 33
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/1.1187763