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Influence of interfacial reactivity on band offsets in ZnSe/GaAs superlattices

✍ Scribed by A.J. Ekpunobi

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
184 KB
Volume
8
Category
Article
ISSN
1369-8001

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Influence of Γ–X mixing on carrier trans
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✍ N. Ohtani; M. Hosoda; H. Mimura; K. Tominaga; T. Watanabe; K. Fujiwara πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 61 KB

We report on the effects of field-induced -X resonances on carrier transport and optical properties of GaAs/AlAs type-I short-period superlattices (SLs). We have observed an anomalously delayed photocurrent and 2-hh1 photoluminescence originating from X1-2 mixing. These observations clearly suggest