Proton bombarded p-Si and neutron irradiated n-GaAs have been studied by DLTS, currentยฑvoltage, and capacitanceยฑvoltage measurements in metalยฑsemiconductor junctions. The junctions were prepared by evaporation of Al onto silicon and of gold onto GaAs. Both junctions exhibited defect bands after bomb
โฆ LIBER โฆ
Influence of impurity band conduction on the electrical characteristics of p-type GaAs
โ Scribed by Dr. H. Neumann
- Publisher
- John Wiley and Sons
- Year
- 1988
- Tongue
- English
- Weight
- 441 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0232-1300
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