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Influence of impact ionization on the drain conductance in InAs-AlSb quantum well heterostructure field-effect transistors

✍ Scribed by Brar, B.; Kroemer, H.

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Influence of the ratio of gate length to

✍ Yuanjie Lv, Zhaojun Lin, Lingguo Meng, Chongbiao Luan, Zhifang Cao, Yingxia Yu, 📂 Article 📅 2012 🏛 Springer-Verlag 🌐 English ⚖ 314 KB