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Influence of hydrostatic pressure at the temperatures about 1500 K on defect structure of Czochralski silicon

✍ Scribed by J. Auleytner; L. Datsenko; V. Klad’ko; V. Machulin; V. Melnyk; I. Prokopenko; J. Bak-Misiuk; A. Misiuk

No coin nor oath required. For personal study only.

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