✦ LIBER ✦

Influence of growth and annealing conditions on photoluminescence of Ge/Si layers grown on oxidized Si surfaces

✍ Scribed by Shklyaev, A A; Cho, S-P; Nakamura, Y; Tanaka, N; Ichikawa, M

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Photoluminescence of Si layers grown on

✍ Shklyaev, A. A.; Nakamura, Y.; Ichikawa, M. 📂 Article 📅 2007 🏛 American Institute of Physics 🌐 English ⚖ 436 KB

Photoluminescence of GeâSi structures

✍ Shklyaev, A. A.; Nobuki, S.; Uchida, S.; Nakamura, Y.; Ichikawa, M. 📂 Article 📅 2006 🏛 American Institute of Physics 🌐 English ⚖ 457 KB

Influence of growth conditions on the fo

✍ I.A. Buyanova; W.M. Chen; A. Henry; W.-X. Ni; G.V. Hansson; B. Monemar 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 326 KB

Surface morphology of Ge layers epitaxia

✍ Shklyaev, A.A.; Romanyuk, K.N.; Kosolobov, S.S. 📂 Article 📅 2014 🏛 Elsevier Science 🌐 English ⚖ 636 KB

Effect of tensile-strained Si layer on p

✍ M. V. Shaleev; A. V. Novikov; A. N. Yablonskiĭ; O. A. Kuznetsov; Yu. N. Drozdov; 📂 Article 📅 2007 🏛 Springer 🌐 English ⚖ 255 KB

Impact ionization of excitons in Ge/Si s

✍ Shklyaev, A. A.; Shegai, O. A.; Nakamura, Y.; Ichikawa, M. 📂 Article 📅 2014 🏛 American Institute of Physics 🌐 English ⚖ 1015 KB