Influence of Ge nanocrystals and radiation defects on C–V characteristics in Si-MOS structures

Effects of beta-ray irradiation on the C

Effects of beta-ray irradiation on the C–V and G/ω–V characteristics of Au/SiO2/n-Si (MOS) structures

✍ A. Tataroğlu; M.H. Bölükdemir; G. Tanır; Ş. Altındal; M.M. Bülbül 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 228 KB

The effects of b-ray irradiation on the electrical characteristics of Au/SiO 2 /n-Si (MOS) structures have been investigated using capacitance-voltage (C-V) and conductance-voltage (G/x-V) measurements. The MOS structures were irradiated with beta rays at doses up to 30 kGy. The C-V and G/x-V charac