In this work we have studied the optical properties of InAs quantum dots (QDs) grown by molecular-beam epitaxy on GaAs (211)A, on (n11)A/B (where n is 1, 5 and 7), and on reference (100) substrates. Investigation of orientation and polarity effects by means of photoluminescence (PL) are also present
β¦ LIBER β¦
Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
β Scribed by B. L. Liang; Zh. M. Wang; K. A. Sablon; Yu. I. Mazur; G. J. Salamo
- Book ID
- 107470235
- Publisher
- Springer-Verlag
- Year
- 2007
- Tongue
- English
- Weight
- 378 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1931-7573
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