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Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays

✍ Scribed by Yun Ki Lee; Byong Sun Chun; Young Keun Kim; Injun Hwang; Wanjun Park; Taewan Kim; Hongseog Kim; Jangeun Lee; Won-Cheol Jeong

Book ID: 114649920
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 403 KB
Volume: 41
Category: Article
ISSN: 0018-9464
DOI: 10.1109/tmag.2004.842079

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