✦ LIBER ✦

Influence of extended defects on gold diffusion in plastically deformed silicon

✍ Scribed by O. V. Feklisova; E. B. Yakimov

Book ID: 110203117
Publisher: Pleiades Publishing
Year: 2009
Tongue: English
Weight: 252 KB
Volume: 3
Category: Article
ISSN: 1027-4510
DOI: 10.1134/s1027451009040211

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

The influence of lattice defects on posi

The influence of lattice defects on positron annihilation in plastically deformed copper

✍ Ken-ichi Takagi; Kazuhiko Kuribayashi; Susumu Nanao; Shoichiro Tanigawa; Masao D 📂 Article 📅 1971 🏛 Elsevier Science 🌐 English ⚖ 147 KB

Influence of structure defects on the ra

Influence of structure defects on the radiation enhanced gold diffusion in silicon

✍ Koifman, A. I. ;Narkulov, N. A. ;Yunusov, M. S. 📂 Article 📅 1975 🏛 John Wiley and Sons 🌐 English ⚖ 225 KB

Electrical Properties and Defect Structu

Electrical Properties and Defect Structure of Plastically Deformed Silicon Crystals Doped with Gold

✍ Aristov, V. V. ;Bondarenko, I. E. ;Heydenreich, J. ;Khodos, T. I. ;Snighireva, I 📂 Article 📅 1987 🏛 John Wiley and Sons 🌐 English ⚖ 794 KB

Interstitial–Substitutional Diffusion Ki

Interstitial–Substitutional Diffusion Kinetics and Dislocation-Induced Trapping of Zinc in Plastically Deformed Silicon

✍ Bracht, H. ;Stolwijk, N. A. ;Yonenaga, I. ;Mehrer, H. 📂 Article 📅 1993 🏛 John Wiley and Sons 🌐 English ⚖ 725 KB

Discussion on “apparent enhancement of d

Discussion on “apparent enhancement of diffusion coefficients in plastically deformed metals”

✍ D. Duhl; J. Taranto; M. Cohen 📂 Article 📅 1964 🏛 Elsevier Science ⚖ 243 KB

Annealing effect on the electrical activ

Annealing effect on the electrical activity of extended defects in plastically deformed p-Si with low dislocation density

✍ Feklisova, O. V. ;Pichaud, B. ;Yakimov, E. B. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 159 KB

## Abstract It is shown that after plastic deformation in clean conditions the most efficient recombination defects in Si are dislocation trails. The DLTS spectrum associated with the defects in the dislocation trails in p‐Si are revealed. The thermal annealing effect on the electrical properties o