The influence on the excitonic luminescence and reflectance spectra of an electric field applied to a Schottky-barrier GaN structure was investigated in dependence on the uncompensated donor concentration. It was discovered that quenching of the luminescence takes place under a reverse bias, while a
β¦ LIBER β¦
Influence of excitons and electric fields on the dielectric function of GaN: Theory and experiment
β Scribed by Winzer, A. T.; Gobsch, G.; Goldhahn, R.; Fuhrmann, D.; Hangleiter, A.; Dadgar, A.; Krost, A.
- Book ID
- 120589107
- Publisher
- The American Physical Society
- Year
- 2006
- Tongue
- English
- Weight
- 722 KB
- Volume
- 74
- Category
- Article
- ISSN
- 1098-0121
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