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Influence of doping on the reliability of AlGaInP LEDs

✍ Scribed by Paola Altieri-Weimar; Arndt Jaeger; Thomas Lutz; Peter Stauss; Klaus Streubel; Klaus Thonke; Rolf Sauer


Book ID
106398045
Publisher
Springer US
Year
2008
Tongue
English
Weight
363 KB
Volume
19
Category
Article
ISSN
0957-4522

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The influence of Si doping on the photoluminescence (PL) properties of (Al 0.3 Ga 0.7 ) 0.5 In 0.5 P/Ga 0.5 In 0.5 P multiple-quantum-wells (MQWs) was studied. For the samples without p-type layers, the PL peak wavelength from (Al 0.3 Ga 0.7 ) 0.5 In 0.5 P/Ga 0.5 In 0.5 P MQWs did not vary when Si w