Influence of doping on the dynamical properties of III–V–N by Raman scattering, infrared absorption and model calculations

The influence of the group V/III molar p

The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD

✍ Durkaya, G. ;Buegler, M. ;Atalay, R. ;Senevirathna, I. ;Alevli, M. ;Hitzemann, O 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 396 KB

## Abstract The influence of the group V/III molar precursor ratio on the surface morphological and electrical properties of In~0.65~Ga~0.35~N epilayers has been investigated. The layers studied have been grown by high‐pressure chemical vapor deposition, a growth technique that utilizes the reactor