✦ LIBER ✦

Influence of doping on facet formation at the SiO2/Si interface

✍ Scribed by B. Gallas; J.M. Hartmann; G. Breton; J.J. Harris; J. Zhang; B.A. Joyce

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electrical properties at the Nd-doped Si

✍ T.J. Zhang; S.Y. Li 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 146 KB

Formation of SiO at Si/SiO2 interface an

✍ G.K. Celler; L.E. Trimble 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 676 KB

Experimental study of electrical propert

✍ T.J. Zhang 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 373 KB

Electrical characterization of the boron

✍ Ghannam, M.Y.; Mertens, R.P.; De Keersmaecker, R.F.; Van Overstraeten, R.J. 📂 Article 📅 1985 🏛 IEEE 🌐 English ⚖ 698 KB

ESR observation of phosphorus pile-up at

✍ A. Stesmans 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 480 KB

A first-principles study of As doping at

✍ Corsetti, Fabiano; Mostofi, Arash A 📂 Article 📅 2013 🏛 Institute of Physics 🌐 English ⚖ 578 KB