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Influence of channel width on n- and p-type nano-wire-MOSFETs on silicon on insulator substrate

✍ Scribed by M. Lemme; T. Mollenhauer; W. Henschel; T. Wahlbrink; M. Heuser; M. Baus; O. Winkler; B. Spangenberg; R. Granzner; F. Schwierz; H. Kurz

Book ID: 114155621
Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 363 KB
Volume: 67-68
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(03)00191-6

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