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Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)

✍ Scribed by J. Bhandari; M. Vinet; T. Poiroux; B. Previtali; B. Vincent; L. Hutin; J.P. Barnes; S. Deleonibus; A.M. Ionescu


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
682 KB
Volume
154-155
Category
Article
ISSN
0921-5107

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