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Influence of carrier-carrier and carrier-phonon correlations on optical absorption and gain in quantum-dot systems

✍ Scribed by Lorke, M.; Nielsen, T. R.; Seebeck, J.; Gartner, P.; Jahnke, F.


Book ID
120240461
Publisher
The American Physical Society
Year
2006
Tongue
English
Weight
173 KB
Volume
73
Category
Article
ISSN
1098-0121

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Self-assembled GaN quantum dots (QDs) grown on Al 0.15 Ga 0.85 N using Si as anti-surfactant were investigated by resonant Raman scattering. Phonons of GaN QDs of different sizes were probed selectively by using laser excitation energies of 3.53 and 5.08 eV. Phonon confinement effects were evidenced