## Abstract We report the effect of defects that appear during capping layer growth or are introduced intentionally, on the photoluminescence (PL) properties of InAs strained quantum dots. A treatment of the samples with CCl~4~ during the growth leads to the reduction of native defect concentration
Influence of bimodal distribution and excited state emission on photoluminescence spectra of InAs self-assembled quantum dots
✍ Scribed by Franchello, Flavio; de Souza, Leonardo D.; Laureto, Edson; Quivy, Alain A.; Dias, Ivan F.L.; Duarte, José L.
- Book ID
- 123582757
- Publisher
- Elsevier Science
- Year
- 2013
- Tongue
- English
- Weight
- 795 KB
- Volume
- 137
- Category
- Article
- ISSN
- 0022-2313
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