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Influence of Ar gas flow rate in organosilicon plasma for the fabrication of SiO:CH thin films by PECVD method

✍ Scribed by Yongsup Yun; Takanori Yoshida; Norifumi Shimazu; Naoki Nanba; Yasushi Inoue; Nagahiro Saito; Osamu Takai

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 419 KB
Volume: 202
Category: Article
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2008.06.004

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✦ Synopsis

Binder film of nano-cluster XPS FT-IR OES Water contact angle SiO:CH films were prepared by capacitively coupled RF PECVD to investigate the dependence on Ar gas flow ratio based on plasma reactions and film properties. The introduced Ar gas flow rate increases an the amorphous carbon network, and dangling bonds or -OH terminations due to Ar ion bombardment. Moreover, Ar gas flow rate alters the dissociation reactions and leads to change the chemical bonding states and the water contact angle.

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