The properties of Ru films deposited by
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Park, Taeyong ;Choi, Dongjin ;Choi, Hagyoung ;Jeon, Hyeongtag
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Article
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2011
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John Wiley and Sons
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English
⚖ 405 KB
## Abstract By using remote plasma atomic layer deposition (ALD), ruthenium thin films were deposited on SiO~2~ using bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)~2~] as a Ru precursor and an ammonia plasma as a reactant. Different plasma treatments were applied, and the best results were obtained