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Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition

✍ Scribed by Meiping Zhu, 朱美萍; Kui Yi, 易葵; Zhengxiu Fan, 范正修; Jianda Shao, 邵建达


Book ID
115369014
Publisher
Optics InfoBase
Year
2011
Tongue
English
Weight
177 KB
Volume
9
Category
Article
ISSN
1671-7694

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## Abstract By using remote plasma atomic layer deposition (ALD), ruthenium thin films were deposited on SiO~2~ using bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)~2~] as a Ru precursor and an ammonia plasma as a reactant. Different plasma treatments were applied, and the best results were obtained