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Influence of a resistive sublayer at the polysilicon/silicon dioxide interface on MOS properties

✍ Scribed by Lifshitz, N.; Luryi, S.

Book ID
114594455
Publisher
IEEE
Year
1983
Tongue
English
Weight
419 KB
Volume
30
Category
Article
ISSN
0018-9383

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In this work, new observations noted in the capacitance-voltage (CV) behaviour of polysilicon/oxide/silicon capacitor structures are reported. As the doping concentration in the polysilicon layer is reduced, anomalous CV characteristics are observed, which are not related to depletion into the polys