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Indium tin oxide-coated silicon as a selective absorber

โœ Scribed by Goldner, R. B. ;Haskal, H. M.

Book ID
115324605
Publisher
The Optical Society
Year
1975
Tongue
English
Weight
645 KB
Volume
14
Category
Article
ISSN
1559-128X

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๐Ÿ“œ SIMILAR VOLUMES

Indium tin oxide/(n+-p) silicon solar ce
Indium tin oxide/(n+-p) silicon solar cell
โœ A. Chaoui; R. Ardebili; J.C. Manifacier ๐Ÿ“‚ Article ๐Ÿ“… 1985 ๐Ÿ› Elsevier Science โš– 290 KB

The solar cell structure consists of a shallow n+-p junction prepared on a p-type silicon substrate using phosphorus diffusion at a temperature of 800 ยฐC. A conductive layer of indium tin oxide is then deposited by spray pyrolysis. Both polycrystalline and monocrystalline silicon have been used. Th