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Indium incorporation above 800âÂ°C during metalorganic vapor phase epitaxy of InGaN

✍ Scribed by Schenk, H. P. D.; de Mierry, P.; LauÌgt, M.; OmneÌs, F.; Leroux, M.; Beaumont, B.; Gibart, P.

No coin nor oath required. For personal study only.

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Indium incorporation above 800âÂ°C during metalorganic vapor phase epitaxy of InGaN