๐”– Bobbio Scriptorium
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Indium antimonide doping with sulphur at high pressure

โœ Scribed by J. Jung


Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
258 KB
Volume
63
Category
Article
ISSN
0022-0248

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Doping of Silicon Epitaxial Layers With
โœ Dr. H. Krause ๐Ÿ“‚ Article ๐Ÿ“… 1969 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 370 KB

## Doping of Silicon Epitaxial Layers with Arsenic at very High Concentrations Silicon epitaxial layers grown from reduction of SiCl, in H, have been highly doped with arsenic. As an upper limit of doping for layers without structural defects typical to high doping a value of about 2 . 1019 (3111-