Index of refraction of GaAsAlxGa1−xAs superlattices and multiple quantum wells
✍ Scribed by K.B. Kahen; J.P. Leburton
- Publisher
- Elsevier Science
- Year
- 1987
- Tongue
- English
- Weight
- 459 KB
- Volume
- 3
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
✦ Synopsis
Recent research of superlattlces
and multiple quantum wells has generated considerable interest in the optical waveguiding properties of these structures for optoelectrontc applications.
As a result we present a theoretical study of the index of refraction of superlattices and determine its variation as a function of frequency and the superlattice parameters, i.e., layer width and AIAs composition, r-reglon exciton and valence-band mixing effects are included in the model.
It is found that these two effects have an important influence on the value of the index of refraction and that superstructure effects rapidly decrease for energies greater than the superlattice potential barriers.
Because of the quasl-two-dimenslonal character of the Fregion excitons, our results indicate that the superlattice index of refraction can vary by % 2Z at the quantized, bound-exciton, transition energies.
Overall, the theoretical results are in good agreement with the experimental data.
📜 SIMILAR VOLUMES
Reflectance ( \(R\) ) and thermoreflectance (TR) of quantum well structures grown by MBE have been investigated at low temperature ( \(30 \mathrm{~K}\) ) in order to demonstrate the capabilities of \(T R\) to study quantum confined systems. Our results show that low temperature \(T R\) is a simple a
We report the results of photoinduced absorption (PA) measurements in the energy range appropriate for transitions between the heavy holes (hh) and the spin orbit split-off valence-band holes (ao), in samples of undoped, bulk GaAa and GaAa/AlGaAa multiple-quantum-wells (MQW). The bulk GaAa hh-so abs