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Increase in the density of β-FeSi2nanoclusters on a Si(111) surface by means of Si(111) √3 × √3R30°-B reconstruction

✍ Scribed by M. V. Ivanchenko; E. A. Borisenko; V. G. Kotlyar; O. A. Utas; V. V. Ustinov; V. G. Lifshits

Book ID: 111449411
Publisher: SP MAIK Nauka/Interperiodica
Year: 2006
Tongue: English
Weight: 273 KB
Volume: 32
Category: Article
ISSN: 1063-7850
DOI: 10.1134/s1063785006050099

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## Abstract The influence of boron on Si molecular beam epitaxy was investigated as function of coverage and temperature by reflection high‐energy electron diffraction (RHEED). The development of the boron‐covered Si surface was studied additionally by ultraviolet photo electron spectroscopy (UPS)