A comprehensive simulation procedure is presented for describing the behaviour of high-frequency "eld e!ect transistors (FETs). It combines a circuit model of the intrinsic part of the device with a hybrid "nite elements/"nite di!erences (FE/FD) technique directly implemented in time domain (TD). Th
Incorporation of Multiport Lumped Networks Into the Hybrid Time-Domain Finite-Element Analysis
โ Scribed by Rui Wang; Jian-Ming Jin
- Book ID
- 114661148
- Publisher
- IEEE
- Year
- 2009
- Tongue
- English
- Weight
- 987 KB
- Volume
- 57
- Category
- Article
- ISSN
- 0018-9480
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