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Inclusive photoproduction of δ(980) and B(1235) at high xF

✍ Scribed by M. Atkinson; T.J. Axon; D. Barberis; T.J. Brodbeck; G.R. Brookes; J.J. Bunn; P.J. Bussey; A.B. Clegg; J.B. Dainton; M. Davenport; B. Dickinson; B. Diekmann; A. Donnachie; R.J. Ellison; P. Flower; P.J. Flynn; W. Galbraith; K. Heinloth; R.C.W. Henderson; R.E. Hughes-Jones; J.S. Hutton; M. Ibbotson; H.P. Jakob; M. Jung; B.R. Kumar; J. Laberrigue; G.D. Lafferty; J.B. Lane; J.C. Lassalle; J.M. Levy; V. Liebenau; R. McClatchey; D. Mercer; J.A.G. Morris; J.V. Morris; D. Newton; C. Paterson; G.N. Patrick; E. Paul; C. Raine; M. Reidenbach; H. Rotscheidt; A. Schlösser; P.H. Sharp; I.O. Skillicorn; K.M. Smith; K.M. Storr; R.J. Thompson; Ch. de la Vaissiere; A.P. Waite; M.F. Worsell; T.P. Yiou


Book ID
113348800
Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
293 KB
Volume
138
Category
Article
ISSN
0370-2693

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Electronic Structure of B δ-Doped Si Qua
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The electronic structure of a d-doped quantum well of B in Si is studied at room temperature in the case of high impurity concentration. The calculation is carried out self-consistently in the framework of the Hartree approximation. A model with three independent hole bands is considered. The energy